Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited ?-Ga2O3 Thin Films

Gallium oxide (?-Ga2O3) is emerging as a promising wide-bandgap semiconductor for optoelectronic and high-power electronic devices. In this study, deep-level defects were investigated in pulsed-laser-deposited epitaxial films of ?-Ga2O3. A deep ultraviolet photodetector (DUV) fabricated on ?-Ga2O3 film showed slow decay time 1.58 s after switching off 250 nm wavelength illumination. Generally, possesses various intentional unintentional trap levels. Herein, these traps using the fractional emptying thermally stimulated current (TSC) method temperature range 85 to 473 K. Broad peaks net TSC curve observed further resolved identify characteristic peak individual method. Several having activation energies 0.16 1.03 eV identified. Among them, with energy was found be most dominant level it possibly responsible persistent photocurrent PLD-grown thin films. The findings work could pave way fabrication high-performance DUV photodetectors.